The book "Silicon Quantum Integrated Circuits" offers a comprehensive analysis of the quantum mechanical effects that are becoming increasingly important in microelectronics, especially as structural sizes shrink to 100 nm in the lateral dimension and 10 nm in the vertical dimension. It discusses advanced device concepts that leverage these effects to develop integrated circuits with novel or enhanced properties. The focus is on silicon-based quantum devices that can operate at room temperature. The authors discuss the fundamental physical principles, materials, and technological aspects, as well as the basic functioning of the devices in an interdisciplinary context. The role of silicon-germanium (SiGe) heterostructure devices in realizing silicon-based quantum electronics is particularly emphasized.