The book "Advanced Gate Stacks for High-Mobility Semiconductors" offers a comprehensive analysis of the challenges and advancements in the field of nanoelectronic devices, particularly concerning gate scaling and the development of high-mobility semiconductor materials. It highlights the current issues affecting CMOS technology and explores how innovative approaches such as channel engineering with materials like strained silicon, germanium, and III-V compounds can contribute to performance enhancement. The authors, a group of experts in the field, provide insights into the fabrication of complex substrates, the best methods for surface passivation, and the processing of these materials in modern transistors. The book is aimed at professionals and students seeking a deeper understanding of the current developments and challenges in semiconductor technology.